| Osa Ei | Valmistaja | Hakemus |
|---|
| IRF360 | IR | HEXFET transistor thru-hole. VDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25A |
| ST180S18P1L | IR | Phase control thyristor |
| 10BQ060 | IR | Schottky rectifier |
| ST300C16C0L | IR | Phase control thyristor |
| IRG4PSC71KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A |
| ST230S16P2 | IR | Phase control thyristor |
| SD103R16S15MV | IR | Fast recovery diode |
| IRF9956 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.10 Ohm |
| 307U80P4 | IR | Standard recovery diode |
| IRF7530 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.030 Ohm. |
| IRF3709 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 9.0 mOhm, ID = 90A |
| ST303S12MFN1 | IR | Inverter grade thyristor |
| ST303S04PFN1L | IR | Inverter grade thyristor |
| ST203C12CHH1 | IR | Inverter grade thyristor |
| IRL620S | IR | HEXFET power mosfet |
| 303URA160P2 | IR | Standard recovery diode |
| SD453N20S30MSC | IR | Fast recovery diode |
| ST083S10PFK2L | IR | Inverter grade thyristor |
| ST700C16L3L | IR | Phase control thyristor |
| ST300C08C0 | IR | Phase control thyristor |
| ST300C12C3L | IR | Phase control thyristor |
| 307UR120 | IR | Standard recovery diode |
| ST730C16L1L | IR | Phase control thyristor |
| IRGP430UD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
| SD103N04S15MSC | IR | Fast recovery diode |
| IRFBF20L | IR | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A |
| IRG4PH40K | IR | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A |
| ST180S12P0V | IR | Phase control thyristor |
| IRGPC50FD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
| IRF7478 | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 26mOhm, ID = 4.2A @ VGS = 10V. RDS(on) = 30mOhm, ID = 3.5A @ VGS = 4.5V. |
