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IRF7530 spec: HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.030 Ohm.
IRF7530 Samanlaisia
- IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF720
- N-channel HEXFET, 400V, 3.3A
- IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
- IRF721
- N-channel HEXFET, 350V, 3.3A
- IRF722
- N-channel HEXFET, 400V, 2.8A
IRF7530 Datasheet ja Spec
Valmistaja : IR
Pakkauspäivämäärä : Micro8
Pins : 8
Lämpötila : Min -55 °C | Max 150 °C
Koko : 91 KB
Hakemus : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.030 Ohm.
IRF7530 PDF Lataa