Path:okDatasheet > Semiconductor Datasheet > IR Datasheet > IR-136
IRFY430CM SD203N10S15MC SD453R20S30PSC SD150N16PBV SD203R10S15PSC 200HF80PV ST300C12L1L SD150N04MC 112RKI80S90 ST380CH06C0 ST1200C20K0L ST303S12PFN3 IRF9532 ST180S04P1 200HFR120PBV ST700C22L2 CPV363MF SD453R12S20PTC SD453N25S20MTC ST083S12PFK1 SD200N08PBC 305UA250 307URA160 IRG4
Osa Ei | Valmistaja | Hakemus |
---|---|---|
SD203R08S20PC | IR | Fast recovery diode |
45LF40 | IR | Standard recovery diode |
IRFY430CM | IR | HEXFET power mosfet |
SD203N10S15MC | IR | Fast recovery diode |
SD453R20S30PSC | IR | Fast recovery diode |
SD150N16PBV | IR | Standard recovery diode |
SD203R10S15PSC | IR | Fast recovery diode |
200HF80PV | IR | Standard recovery diode |
ST300C12L1L | IR | Phase control thyristor |
SD150N04MC | IR | Standard recovery diode |
112RKI80S90 | IR | Phase control thyristor |
ST380CH06C0 | IR | Phase control thyristor |
ST1200C20K0L | IR | Phase control thyristor |
ST303S12PFN3 | IR | Inverter grade thyristor |
IRF9532 | IR | P-channel MOSFET, 100V, 10A |
ST180S04P1 | IR | Phase control thyristor |
200HFR120PBV | IR | Standard recovery diode |
ST700C22L2 | IR | Phase control thyristor |
CPV363MF | IR | IGBT SIP module |
SD453R12S20PTC | IR | Fast recovery diode |
SD453N25S20MTC | IR | Fast recovery diode |
ST083S12PFK1 | IR | Inverter grade thyristor |
SD200N08PBC | IR | Standard recovery diode |
305UA250 | IR | Standard recovery diode |
307URA160 | IR | Standard recovery diode |
IRG4PC50 | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.45V @ VGE = 15V, IC = 39A |
SD200N08MC | IR | Standard recovery diode |
ST300C20L0L | IR | Phase control thyristor |
IRFI720G | IR | HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 2.6 A |
303UA250 | IR | Standard recovery diode |