| Osa Ei | Valmistaja | Hakemus |
|---|
| SD103N25S10PBC | IR | Fast recovery diode |
| IRFR6215 | IR | HEXFET power MOSFET. VDSS = -150V, RDS(on) = 0.295 Ohm, ID = -13A |
| 301UR80P4 | IR | Standard recovery diode |
| IR2152S | IR | Self-oscillating half-bridge driver |
| IRF3808L | IR | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A |
| ST333S04PFM3L | IR | Inverter grade thyristor |
| 300U80A | IR | Standard recovery diode |
| 48LR120D | IR | Standard recovery diode |
| SD153R16S15MSV | IR | Fast recovery diode |
| IRFP460 | IR | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.27 Ohm, ID = 20 A |
| IRU1117CS | IR | 800mA low dropout positive adjustable regulator |
| SD170OC30K | IR | Standard recovery diode |
| IRFD210 | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 0.60 A |
| ST303C04CHK0L | IR | Inverter grade thyristor |
| 309UA200P3 | IR | Standard recovery diode |
| SD203R12S10MC | IR | Fast recovery diode |
| SD150N04PC | IR | Standard recovery diode |
| JANTX2N6768 | IR | HEXFET power mosfet |
| ST700C22L3L | IR | Phase control thyristor |
| SD233N40S50MC | IR | Fast recovery diode |
| IRF5803D2 | IR | FETKY MOSFET & schottky diode. VDSS = -40V, RDS(on) = 112 mOhm, schottky Vf = 0.51V |
| 300HF40M | IR | Standard recovery diode |
| IRFI460 | IR | HEXFET transistor (N-channel). BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21 A |
| 45L160D | IR | Standard recovery diode |
| 301U80P3 | IR | Standard recovery diode |
| IRG4RC10UD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. |
| SD300N16MBV | IR | Standard recovery diode |
| 300UF120YPD | IR | Standard recovery diode |
| IRFIZ48G | IR | N-channel power MOSFET, 60V, 37A |
| ST333C04LHK2L | IR | Inverter grade thyristor |
