BUT12AF spec: NPN silicon diffused power transistor. For switching power circuits

BUT12AF Samanlaisia

BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11A
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11AF
- NPN silicon diffused power transistor. For switching power circuits
BUT12
- NPN silicon diffused power transistor. For switching power circuits
BUT12A
- NPN silicon diffused power transistor. For switching power circuits
BUT12AF
- NPN silicon diffused power transistor. For switching power circuits

BUT12AF Datasheet ja Spec

Valmistaja : WingShing

Pakkauspäivämäärä : TO-220F

Pins : 3

Lämpötila : Min 0 °C | Max 0 °C

Koko : 78 KB

Hakemus : NPN silicon diffused power transistor. For switching power circuits