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BUT11A Samanlaisia

  • BUT11
    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
  • BUT11
    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
  • BUT11A
    • NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
  • BUT11AF
    • NPN silicon diffused power transistor. For switching power circuits
  • BUT12
    • NPN silicon diffused power transistor. For switching power circuits
  • BUT12A
    • NPN silicon diffused power transistor. For switching power circuits
  • BUT12AF
    • NPN silicon diffused power transistor. For switching power circuits

BUT11A Datasheet ja Spec

Valmistaja : WingShing 

Pakkauspäivämäärä : TO-220 

Pins : 3 

Lämpötila : Min 0 °C | Max 0 °C

Koko : 24 KB

Hakemus : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V. 

BUT11A PDF Lataa