PHW14N50E Samanlaisia

  • PHW10N40E
    • 400 V, power MOS transistor avalanche energy rated
  • PHW10N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHW10N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHW11N50E
    • PowerMOS transistor. Avalancne energy rated.
  • PHW11N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW11N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHW13N40E
    • PowerMOS transistor. Avalanche energy rated.
  • PHW14N50E
    • PowerMOS transistor. Avalanche energy rated.

PHW14N50E Datasheet ja Spec

Valmistaja : Philips 

Pakkauspäivämäärä : SOT429 

Pins : 3 

Lämpötila : Min -55 °C | Max 150 °C

Koko : 29 KB

Hakemus : PowerMOS transistor. Avalanche energy rated. 

PHW14N50E PDF Lataa