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PHW11N50E spec: PowerMOS transistor. Avalancne energy rated.
PHW11N50E Samanlaisia
- PHW10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW11N50E
- PowerMOS transistor. Avalancne energy rated.
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW13N40E
- PowerMOS transistor. Avalanche energy rated.
- PHW14N50E
- PowerMOS transistor. Avalanche energy rated.
PHW11N50E Datasheet ja Spec
Valmistaja : Philips
Pakkauspäivämäärä : SOT429
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 45 KB
Hakemus : PowerMOS transistor. Avalancne energy rated.
PHW11N50E PDF Lataa