Path:OKDatasheet > Semiconductor Datasheet > Motorola Datasheet > MTD3055VL
MTD3055VL spec: TMOS V power field effect transistor D2PAK for surface mount
MTD3055VL Samanlaisia
- MTD3055EL
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055EL1
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3302
- HDTMOS single N-channel field effect transistor
MTD3055VL Datasheet ja Spec
Valmistaja : Motorola
Pakkauspäivämäärä : DPAK
Pins : 4
Lämpötila : Min -55 °C | Max 175 °C
Koko : 229 KB
Hakemus : TMOS V power field effect transistor D2PAK for surface mount
MTD3055VL PDF Lataa