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MTD3055EL1 spec: N-channel enhancement-mode silicon gate, 10A, 80V
MTD3055EL1 Samanlaisia
- MTD3055EL
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055EL1
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3302
- HDTMOS single N-channel field effect transistor
MTD3055EL1 Datasheet ja Spec
Valmistaja : Motorola
Pakkauspäivämäärä : 368-06
Pins : 3
Lämpötila : Min -65 °C | Max 150 °C
Koko : 417 KB
Hakemus : N-channel enhancement-mode silicon gate, 10A, 80V
MTD3055EL1 PDF Lataa