Path:OKDatasheet > Semiconductor Datasheet > Motorola Datasheet > MTB3N120E
MTB3N120E spec: TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N120E Samanlaisia
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB33N10E
- TMOS E-FET high energy power FET
- MTB36N06V
- TMOS V power field effect transistor
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N120E Datasheet ja Spec
Valmistaja : Motorola
Pakkauspäivämäärä : DPAK
Pins : 4
Lämpötila : Min -55 °C | Max 150 °C
Koko : 354 KB
Hakemus : TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N120E PDF Lataa