Magnatec Datalehti Catalog-2
| Osa Ei | Valmistaja | Hakemus |
|---|---|---|
| BUZ907P | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
| BUZ903D | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
| BUZ908P | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
| BUL54A | Magnatec | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. |
| BUZ908D | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. |
| BUZ902P | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. |
| BUZ907D | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. |
| BUZ901D | Magnatec | N-channel power MOSFET for audio applications, 200V |
| BCU86 | Magnatec | NPN epitaxial planar silicon tpansistor. Ideal for high current switching application. |
| BUZ901P | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. |
| BUZ906DP | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
| BUZ906X4S | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
| BUZ900D | Magnatec | N-channel power MOSFET for audio applications, 160V |
| BUZ906P | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
| BCU81 | Magnatec | NPN epitaxial planar silicon tpansistor. Ideal for high current driver applications requiring low loss devices. |
| BUL74B | Magnatec | Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. |
| BUZ905P | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. |
| BUZ900P | Magnatec | N-channel power MOSFET for audio applications, 160V |
| BUZ900P | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. |
| BCU83D | Magnatec | NPN epitaxial planar silicon tpansistor. Ideal for high current switching application. |
| SMX35 | Magnatec | Silicon NPN epitaxial planar power transistor. |
| BUZ903 | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. |
| BUZ901DP | Magnatec | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. |
| BCU83 | Magnatec | NPN epitaxial planar silicon tpansistor. Ideal for high current driver applications reguiring low loss devices. |
| BUZ905DP | Magnatec | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. |
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