BUZ906X4S spec: P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.

BUZ906X4S Samanlaisia

BUZ903P
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ906X4S Datasheet ja Spec

Valmistaja : Magnatec

Pakkauspäivämäärä : SOT227

Pins : 4

Lämpötila : Min 0 °C | Max 150 °C

Koko : 36 KB

Hakemus : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.