BUZ901DP spec: N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.

BUZ901DP Samanlaisia

BUZ903P
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ901DP Datasheet ja Spec

Valmistaja : Magnatec

Pakkauspäivämäärä : TO-3PBL

Pins : 3

Lämpötila : Min 0 °C | Max 150 °C

Koko : 42 KB

Hakemus : N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.