| Osa Ei | Valmistaja | Hakemus |
|---|
| LCE18A | MDE Semiconductor | 18.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| 5KP70A | MDE Semiconductor | 70.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-7D511M | MDE Semiconductor | 510V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc |
| MDE-10D561K | MDE Semiconductor | 560V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| MDE-7D201M | MDE Semiconductor | 200V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc |
| 5KP17 | MDE Semiconductor | 17.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX20-22.0CA | MDE Semiconductor | 22.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-20.0CA | MDE Semiconductor | 20.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMCJ6.0A | MDE Semiconductor | 6.00V; 10mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ26 | MDE Semiconductor | 26.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE11A | MDE Semiconductor | 9.40V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 5KP33 | MDE Semiconductor | 33.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMLJ13A | MDE Semiconductor | 13.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-100.0C | MDE Semiconductor | 100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ45A | MDE Semiconductor | 45.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE43 | MDE Semiconductor | 34.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 3KP11 | MDE Semiconductor | 11.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1.5KE440A | MDE Semiconductor | 376.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-40D751K | MDE Semiconductor | 750V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc |
| MDE-5D221K | MDE Semiconductor | 220V; max peak current800A; metal oxide varistor. Standard D series 5mm disc |
| MAX40-90.0C | MDE Semiconductor | 90.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ9.0 | MDE Semiconductor | 9.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-5D220M | MDE Semiconductor | 22V; max peak current250A; metal oxide varistor. Standard D series 5mm disc |
| MAX20-43.0C | MDE Semiconductor | 43.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-11.0C | MDE Semiconductor | 11.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SA9.0 | MDE Semiconductor | 9.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KW78 | MDE Semiconductor | 78.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX20-51.0C | MDE Semiconductor | 51.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ160A | MDE Semiconductor | 160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE200A | MDE Semiconductor | 171.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
