Path:okDatasheet > Semiconductor Datasheet > MDE Semiconductor Datasheet > MDE Semiconductor-44
4S951K P4KE220A 30KW216 MDE-5D431K SMDJ100 MDE-5D820K MDE-14D181K 15KW20A MDE-20D181K SMBJ6.0 1.5KE250 1.5KE56A MDE-20D241K MDE-40D221K 3KP22A SA100 15KP70 SMBJ160 P4KE11A SMDJ28 20KW20A 15KP100A SMAJ100A MDE-10D330K 5KP78A SA18 MAX40-150.0C SMLJ24A
Osa Ei | Valmistaja | Hakemus |
---|---|---|
3T064A | MDE Semiconductor | 58V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
1.5KE11 | MDE Semiconductor | 8.92V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE-34S951K | MDE Semiconductor | 950V; max peak current40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square |
P4KE220A | MDE Semiconductor | 185.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
30KW216 | MDE Semiconductor | 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE-5D431K | MDE Semiconductor | 430V; max peak current800A; metal oxide varistor. Standard D series 5mm disc |
SMDJ100 | MDE Semiconductor | 100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE-5D820K | MDE Semiconductor | 82V; max peak current800A; metal oxide varistor. Standard D series 5mm disc |
MDE-14D181K | MDE Semiconductor | 180V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc |
15KW20A | MDE Semiconductor | 20.0V; 20mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE-20D181K | MDE Semiconductor | 180V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc |
SMBJ6.0 | MDE Semiconductor | 5.00V; 10mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
1.5KE250 | MDE Semiconductor | 202.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
1.5KE56A | MDE Semiconductor | 47.80V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE-20D241K | MDE Semiconductor | 240V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc |
MDE-40D221K | MDE Semiconductor | 220V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc |
3KP22A | MDE Semiconductor | 22.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SA100 | MDE Semiconductor | 100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
15KP70 | MDE Semiconductor | 70V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
SMBJ160 | MDE Semiconductor | 160.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
P4KE11A | MDE Semiconductor | 9.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SMDJ28 | MDE Semiconductor | 28.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
20KW20A | MDE Semiconductor | 20.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
15KP100A | MDE Semiconductor | 100V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
SMAJ100A | MDE Semiconductor | 100.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE-10D330K | MDE Semiconductor | 33V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc |
5KP78A | MDE Semiconductor | 78.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SA18 | MDE Semiconductor | 18.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MAX40-150.0C | MDE Semiconductor | 150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
SMLJ24A | MDE Semiconductor | 24.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |