| Osa Ei | Valmistaja | Hakemus |
|---|
| 3KP13 | MDE Semiconductor | 13.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX40-10.0C | MDE Semiconductor | 10.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ14 | MDE Semiconductor | 14.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 30KW84 | MDE Semiconductor | 84.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SA12A | MDE Semiconductor | 12.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW90A | MDE Semiconductor | 90.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX40-100.0C | MDE Semiconductor | 100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ48A | MDE Semiconductor | 48.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 30KW240A | MDE Semiconductor | 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-32D241K | MDE Semiconductor | 240V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
| 5KP170 | MDE Semiconductor | 170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-14D112K | MDE Semiconductor | 1100V; max peak current5000A; metal oxide varistor. Standard D series 14mm disc |
| 3KP8.5 | MDE Semiconductor | 8.50V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 5KP26 | MDE Semiconductor | 26.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMLJ51A | MDE Semiconductor | 51.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P6KE36 | MDE Semiconductor | 29.10V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 3KP15A | MDE Semiconductor | 15.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-20D102K | MDE Semiconductor | 1000V; max peak current75000A; metal oxide varistor. Standard D series 20mm disc |
| MAX20-8.5CA | MDE Semiconductor | 8.50V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ6.0 | MDE Semiconductor | 6.00V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 30KW30A | MDE Semiconductor | 30.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| P4KE440 | MDE Semiconductor | 356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KW240 | MDE Semiconductor | 240.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MPTE-18C | MDE Semiconductor | 18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 5KP7.0A | MDE Semiconductor | 7.00V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 5KP51 | MDE Semiconductor | 51.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SA170 | MDE Semiconductor | 170.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 3KP20 | MDE Semiconductor | 20.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMLJ12A | MDE Semiconductor | 12.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 3T180A | MDE Semiconductor | 160V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
