IR Datalehti Catalog-93
| Osa Ei | Valmistaja | Hakemus |
|---|---|---|
| ST203C12CHH2L | IR | Inverter grade thyristor |
| 305UR120 | IR | Standard recovery diode |
| ST303C08CHK0 | IR | Inverter grade thyristor |
| ST303C04LHK2 | IR | Inverter grade thyristor |
| ST300C20L3 | IR | Phase control thyristor |
| SD153N10S10MSV | IR | Fast recovery diode |
| ST2100C38R0L | IR | Phase control thyristor |
| SD103R12S10PC | IR | Fast recovery diode |
| 303URA120P2 | IR | Standard recovery diode |
| 300HF40PS | IR | Standard recovery diode |
| IR2112 | IR | High and low side driver |
| SD600N20PTC | IR | Standard recovery diode |
| 307U200P3 | IR | Standard recovery diode |
| ST730C18L3 | IR | Phase control thyristor |
| SD153R16S10MBV | IR | Fast recovery diode |
| 70U120AYPD | IR | Standard recovery diode |
| IRF7807A | IR | HEXFET chip-set for DC-DC converters. VDSS = 30V. RDS(on) = 25mOhm. |
| SD300N28MC | IR | Standard recovery diode |
| ST180C16C0 | IR | Phase control thyristor |
| IRG4BC30K-S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A |
| ST3230C12R1L | IR | Phase control thyristor |
| IRFP448 | IR | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.60 Ohm, ID = 11 A |
| 301U80P2 | IR | Standard recovery diode |
| SD200R20MSC | IR | Standard recovery diode |
| SD103R04S15MBC | IR | Fast recovery diode |
| ST333S08PFM0L | IR | Inverter grade thyristor |
| 303URA160P4 | IR | Standard recovery diode |
| IRG4PC50U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A |
| SD103N25S20PSC | IR | Fast recovery diode |
| SD403C04S10C | IR | Fast recovery diode |