| Osa Ei | Valmistaja | Hakemus |
|---|
| SD603C10S10C | IR | Fast recovery diode |
| ST2600C24R1L | IR | Phase control thyristor |
| 302UFR160PD | IR | Standard recovery diode |
| IRU1117-18CS | IR | 800mA low dropout positive fixed 1.8V regulator |
| IRF1404S | IR | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. |
| SD303C10S15C | IR | Fast recovery diode |
| SD203N25S10PSC | IR | Fast recovery diode |
| SD600N25MSC | IR | Standard recovery diode |
| 70U10 | IR | Standard recovery diode |
| SD153N10S10PV | IR | Fast recovery diode |
| IRKH50008 | IR | Thyristor/diode and thyristor/thyristor |
| SD200N24PC | IR | Standard recovery diode |
| ST2600C22R2L | IR | Phase control thyristor |
| SD203R14S20MSC | IR | Fast recovery diode |
| SD103N14S20MC | IR | Fast recovery diode |
| 130HF80MBV | IR | Standard recovery diode |
| IRF9240 | IR | HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A |
| IRFIZ46N | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.020 Ohm, ID = 33A |
| 301U160P3 | IR | Standard recovery diode |
| SD253R12S20PBV | IR | Fast recovery diode |
| IRFL210 | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 0.96A |
| SD600R32MSC | IR | Standard recovery diode |
| SD453N16S20MTC | IR | Fast recovery diode |
| ST180C16C2L | IR | Phase control thyristor |
| ST330C14C3L | IR | Phase control thyristor |
| IRF3808S | IR | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.007 Ohm, ID = 106A |
| ST203S10PFJ2 | IR | Inverter grade thyristor |
| ST303C08LHK3 | IR | Inverter grade thyristor |
| ST230C04C0L | IR | Phase control thyristor |
| IRF5803 | IR | HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V |
