IR Datalehti Catalog-92
| Osa Ei | Valmistaja | Hakemus |
|---|---|---|
| SD253R10S20MSV | IR | Fast recovery diode |
| IRFR13N15D | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.18 Ohm, ID = 14A |
| ST303C12CHK2L | IR | Inverter grade thyristor |
| IRFR9120 | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.60 Ohm, ID = -5.6A |
| SD153N10S10PSV | IR | Fast recovery diode |
| ST3230C18R2L | IR | Phase control thyristor |
| ST303C12CHK0 | IR | Inverter grade thyristor |
| SD203N12S10PSC | IR | Fast recovery diode |
| IRGPC30UD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
| ST2100C42R0L | IR | Phase control thyristor |
| SD203R25S20PSC | IR | Fast recovery diode |
| 300UFR160PD | IR | Standard recovery diode |
| JANTXV2N6766 | IR | HEXFET power mosfet |
| SD233R36S50PSC | IR | Fast recovery diode |
| SD103N12S20MC | IR | Fast recovery diode |
| SD453N25S30PSC | IR | Fast recovery diode |
| SD153N08S15MSV | IR | Fast recovery diode |
| IRU1010-33CY | IR | 1A low dropout positive fixed 3.3V regulator |
| ST230S14P2 | IR | Phase control thyristor |
| IRG4PC30W | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A |
| IRF7416 | IR | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.02 Ohm. |
| 200HFR120MV | IR | Standard recovery diode |
| 307URA80P4 | IR | Standard recovery diode |
| IRKT50016 | IR | Thyristor/diode and thyristor/thyristor |
| ST110S16P1L | IR | Phase control thyristor |
| 303URA200P2 | IR | Standard recovery diode |
| ST230C08C0 | IR | Phase control thyristor |
| ST2100C34R2L | IR | Phase control thyristor |
| ST110S04P2L | IR | Phase control thyristor |
| IRFB52N15D | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.032 Ohm, ID = 60A |