WMBT5551LT1 spec: NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V

WMBT5551LT1 Samanlaisia

WMBT3904
- NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
WMBT3904
- NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
WMBT3906
- PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
WMBT3906
- PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
WMBT5401LT1
- PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V
WMBT5551LT1
- NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V
WMBTA42
- NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.
WMBTA92
- NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.

WMBT5551LT1 Datasheet ja Spec

Valmistaja : WingShing

Pakkauspäivämäärä : SOT-23

Pins : 3

Lämpötila : Min 0 °C | Max 0 °C

Koko : 39 KB

Hakemus : NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V