S8550LT1 spec: High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V

S8550LT1 Samanlaisia

S8550
- Transistor(PNP). Power dissipation 0.625W, Collector current -0.5A. Collector-base voltage -40V
S8550LT1
- High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V

S8550LT1 Datasheet ja Spec

Valmistaja : WingShing

Pakkauspäivämäärä : SOT-23

Pins : 3

Lämpötila : Min 0 °C | Max 0 °C

Koko : 93 KB

Hakemus : High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V