BDX53B spec: NPN epitaxial silicon transistor. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5V

BDX53B Samanlaisia

BDX53
- NPN epitaxial silicon transistor. Collector-base voltage 45V. Collector-emitter voltage 45V. Emitter-base voltage 5V
BDX53A
- NPN epitaxial silicon transistor. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5V
BDX53B
- NPN epitaxial silicon transistor. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5V
BDX53C
- NPN epitaxial silicon transistor. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V
BDX54
- PNP epitaxial silicon transistor. Collector-base voltage -45V. Collector-emitter voltage -45V. Emitter-base voltage -5V
BDX54A
- PNP epitaxial silicon transistor. Collector-base voltage -60V. Collector-emitter voltage -60V. Emitter-base voltage -5V
BDX54B
- PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V
BDX54B
- PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V

BDX53B Datasheet ja Spec

Valmistaja : WingShing

Pakkauspäivämäärä : TO-220

Pins : 3

Lämpötila : Min 0 °C | Max 0 °C

Koko : 23 KB

Hakemus : NPN epitaxial silicon transistor. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5V