Path:OKDatasheet > Semiconductor Datasheet > Turbo IC Datasheet
Avainsana: Turbo IC Datasheet, Turbo IC Data Sheet, Turbo IC Data, Turbo IC Inc
Path:OKDatasheet > Semiconductor Datasheet > Turbo IC Datasheet
Avainsana: Turbo IC Datasheet, Turbo IC Data Sheet, Turbo IC Data, Turbo IC Inc
Jos haluat löytää tietyn Turbo IC Incdatasivu, hakuun okDatasheet osa numero tai komponentin kuvaus. Sinulle esitetään luettelo kaikista matching osien kanssa Turbo IC tietoiskut. Napsauta mitä tahansa lueteltujen elektroniikkakomponentti nähdä lisää yksityiskohtia mukaan lukien kaikki tekniset tiedot.
Turbo IC virallisella verkkosivustolla
Osa Ei | Hakemus |
---|---|
28LV256JI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV64SC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28C256APC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
TU25C256PI | CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
TU25C128PC-2.7 | CMOS SPI bus. 128K electrically erasable programmable ROM. 16K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
28C64ATM-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28C256ASC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
29C010JI-3 | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. |
28LV64TI-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. |
28LV64JI-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
TU24C32CP3 | CMOS IIC 2-wire bus. 32K electrically erasable programmable ROM. 4K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
28C64API-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. |
28C256ATI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C64ASM-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28C64AJI-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. |
28C256ATI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256AJC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C64ASC-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28C64ATM-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. |
28LV256TI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV64SI-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. |
28LV64PM-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. |
28C64AJC-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. |
TU24C128CS3 | CMOS IIC 2-wire bus. 128K electrically erasable programmable ROM. 16K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
28C256AJC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV64JC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28C64ATI-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28LV256PM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC Inc