STD2NB60T4 Samanlaisia

  • STD20N03L
    • Power dissipation 80 W Transistor polarity N Channel Current Id cont. 20 A Current Idm pulse 80 A Voltage Vgs th max. 2.5 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C
  • STD20N06
    • TRANSISTOR MOSFET TO-252
  • STD20NE03L
    • N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
  • STD20NE06
    • N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
  • STD20NF10
    • N-CHANNEL 100V - 0.038 OHM - 30A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET
  • STD25NE03L
    • N-CHANNEL 30V - 0.019 OHM - 25A - TO-251/TO-252 STRIPFET POWER MOSFET
  • STD25NF10
    • N-CHANNEL 100V 0.033 OHM 25A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
  • STD25NF10L
    • N-CHANNEL 100V - 0.030 OHM - 25A DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET

STD2NB60T4 Datasheet ja Spec

Valmistaja : ST Microelectronics 

Pakkauspäivämäärä :  

Pins : 0 

Lämpötila : Min 0 °C | Max 0 °C

Koko : 320 KB

Hakemus : N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET 

STD2NB60T4 PDF Lataa