Path:OKDatasheet > Semiconductor Datasheet > ST Microelectronics Datasheet > MJD122-1
MJD122-1 spec: "NPN darlington transistor for high DC current gain, 100V, 5A"
MJD122-1 Samanlaisia
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD122-1 Datasheet ja Spec
Valmistaja : ST Microelectronics
Pakkauspäivämäärä : TO-252
Pins : 3
Lämpötila : Min -65 °C | Max 150 °C
Koko : 100 KB
Hakemus : "NPN darlington transistor for high DC current gain, 100V, 5A"
MJD122-1 PDF Lataa