Path:OKDatasheet > Semiconductor Datasheet > SANYO Datasheet > 2SJ226
2SJ226 spec: P-channel MOS silicon FET, very high-speed switching application
2SJ226 Samanlaisia
- 2SJ225
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ225
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ226
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ228
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ229
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ230
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ231
- P-channel MOS silicon FET, very high-speed switching application
- 2SJ232
- P-channel MOS silicon FET, very high-speed switching application
2SJ226 Datasheet ja Spec
Valmistaja : SANYO
Pakkauspäivämäärä : 2085
Pins : 3
Lämpötila : Min 0 °C | Max 0 °C
Koko : 85 KB
Hakemus : P-channel MOS silicon FET, very high-speed switching application
2SJ226 PDF Lataa