F1410 spec: 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Samanlaisia

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Datasheet ja Spec

Valmistaja : Polyfet RF

Pakkauspäivämäärä :

Pins : 6

Lämpötila : Min -65 °C | Max 150 °C

Koko : 39 KB

Hakemus : 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor