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F1221 Samanlaisia

  • F1220
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1221
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1222
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1221 Datasheet ja Spec

Valmistaja : Polyfet RF 

Pakkauspäivämäärä :  

Pins : 2 

Lämpötila : Min -65 °C | Max 150 °C

Koko : 40 KB

Hakemus : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1221 PDF Lataa