F1209 spec: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1209 Samanlaisia

F1206
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1207
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1208
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1209 Datasheet ja Spec

Valmistaja : Polyfet RF

Pakkauspäivämäärä :

Pins : 8

Lämpötila : Min -65 °C | Max 150 °C

Koko : 39 KB

Hakemus : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor