F1174 spec: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 Samanlaisia

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 Datasheet ja Spec

Valmistaja : Polyfet RF

Pakkauspäivämäärä :

Pins : 4

Lämpötila : Min -65 °C | Max 150 °C

Koko : 49 KB

Hakemus : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor