F1060 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 Samanlaisia

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 Datasheet ja Spec

Valmistaja : Polyfet RF

Pakkauspäivämäärä :

Pins : 2

Lämpötila : Min -65 °C | Max 150 °C

Koko : 41 KB

Hakemus : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor