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PHX6ND50E spec: PowerMOS transistor. FREDFET, avalanche energy rated.
PHX6ND50E Samanlaisia
- PHX6N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX6N50E
- 500 V, power MOS transistor avalanche energy rated
- PHX6N60E
- PowerMOS transistor. Avalanche energy rated.
- PHX6N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX6ND50E
- PowerMOS transistor. FREDFET, avalanche energy rated.
- PHX6ND50E
- 500 V, power MOS transistor FREDFET, avalanche energy rated
- PHX6ND50E
- 500 V, power MOS transistor FREDFET, avalanche energy rated
PHX6ND50E Datasheet ja Spec
Valmistaja : Philips
Pakkauspäivämäärä : SOT186A
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 81 KB
Hakemus : PowerMOS transistor. FREDFET, avalanche energy rated.
PHX6ND50E PDF Lataa