Path:OKDatasheet > Semiconductor Datasheet > Philips Datasheet > PHX3N40E
PHX3N40E spec: 400 V, power MOS transistor avalanche energy rated
PHX3N40E Samanlaisia
- PHX3055E
- 55 V, N-channel trenchMOS transistor
- PHX3055L
- 60 V, power MOS transistor logic level FET
- PHX3N40E
- 400 V, power MOS transistor avalanche energy rated
- PHX3N40E
- 400 V, power MOS transistor avalanche energy rated
- PHX3N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX3N60E
- PowerMOS transistor. Avalanche energy rated.
- PHX3N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX3N60E
- 600 V, power MOS transistor avalanche energy rated
PHX3N40E Datasheet ja Spec
Valmistaja : Philips
Pakkauspäivämäärä : SOT
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 70 KB
Hakemus : 400 V, power MOS transistor avalanche energy rated
PHX3N40E PDF Lataa