Path:OKDatasheet > Semiconductor Datasheet > Philips Datasheet > PHX1N60E
PHX1N60E spec: 600 V, power MOS transistor isolated version of PHP1N60E
PHX1N60E Samanlaisia
- PHX10N40E
- PowerMOS transistor. Avalanche energy rated.
- PHX10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHX14NQ20T
- 200 V, N-channel trenchMOS transistor
- PHX15N06E
- 60 V, power MOS transistor
- PHX1N40
- 400 V, power MOS transistor
- PHX1N40E
- 400 V, power MOS transistor
- PHX1N60E
- 600 V, power MOS transistor isolated version of PHP1N60E
PHX1N60E Datasheet ja Spec
Valmistaja : Philips
Pakkauspäivämäärä : SOT
Pins : 3
Lämpötila : Min 0 °C | Max 0 °C
Koko : 26 KB
Hakemus : 600 V, power MOS transistor isolated version of PHP1N60E
PHX1N60E PDF Lataa