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PHW80NQ10T spec: 100 V, N-channel trenchMOS transistor
PHW80NQ10T Samanlaisia
- PHW80NQ10T
- 100 V, N-channel trenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW8N50E
- PowerMOS transistor. Avalanche energy rated.
- PHW8N50E
- PowerMOS transistor. Avalanche energy rated.
- PHW8N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW8ND50E
- 500 V, power MOS transistor FREDFET, avalanche energy rated
PHW80NQ10T Datasheet ja Spec
Valmistaja : Philips
Pakkauspäivämäärä : SOT
Pins : 3
Lämpötila : Min -65 °C | Max 150 °C
Koko : 105 KB
Hakemus : 100 V, N-channel trenchMOS transistor
PHW80NQ10T PDF Lataa