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PHD9NQ20T spec: 200 V, N-channel trenchMOS transistor
PHD9NQ20T Samanlaisia
- PHD95N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHD96NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHD96NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHD98N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHD9NQ20T
- 200 V, N-channel trenchMOS transistor
- PHD9NQ20T
- N-channel TrenchMOS transistor
PHD9NQ20T Datasheet ja Spec
Valmistaja : Philips
Pakkauspäivämäärä : SOT
Pins : 3
Lämpötila : Min -55 °C | Max 175 °C
Koko : 126 KB
Hakemus : 200 V, N-channel trenchMOS transistor
PHD9NQ20T PDF Lataa