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PHB73N06T spec: 55 V, N-channel enhancement mode field-effect transistor
PHB73N06T Samanlaisia
- PHB73N06T
- 55 V, N-channel enhancement mode field-effect transistor
- PHB78NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB78NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB7N60E
- 600 V, power MOS transistor avalanche energy rated
PHB73N06T Datasheet ja Spec
Valmistaja : Philips
Pakkauspäivämäärä : SOT
Pins : 3
Lämpötila : Min -55 °C | Max 175 °C
Koko : 290 KB
Hakemus : 55 V, N-channel enhancement mode field-effect transistor
PHB73N06T PDF Lataa