Path:OKDatasheet > Semiconductor Datasheet > Philips Datasheet > PHB6N60E
PHB6N60E spec: 600 V, power MOS transistor avalanche energy rated
PHB6N60E Samanlaisia
- PHB60N06LT
- TrenchMOS transistor. Logic level FET.
- PHB60N06LT
- TrenchMOS transistor Logic level FET
- PHB60N06T
- TrenchMOS transistor Standard level FET
- PHB65N06LT
- TrenchMOS transistor. Logic level FET.
- PHB65N06LT
- TrenchMOS transistor. Logic level FET.
- PHB65N06LT
- Trench transistor Logic level FET
- PHB65N06LT
- TrenchMOS transistor. Logic level FET.
- PHB65N06LT
- TrenchMOS transistor. Logic level FET.
PHB6N60E Datasheet ja Spec
Valmistaja : Philips
Pakkauspäivämäärä : SOT
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 81 KB
Hakemus : 600 V, power MOS transistor avalanche energy rated
PHB6N60E PDF Lataa