Path:OKDatasheet > Semiconductor Datasheet > Philips Datasheet > PHB2N60E
PHB2N60E spec: 600 V, power MOS transistor avalanche energy rated
PHB2N60E Samanlaisia
- PHB20N06T
- 55 V, N-channel trenchMOS transistor
- PHB20NQ20T
- 200 V, N-channel trenchMOS transistor
- PHB20NQ20T
- N-channel TrenchMOS transistor
- PHB21N06LT
- TrenchMOS transistor. Logic level FET.
- PHB21N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHB21N06T
- TrenchMOS transistor Standard level FET
- PHB23NQ10T
- 100 V, N-channel trenchMOS transistor
- PHB23NQ10T
- N-channel TrenchMOS transistor
PHB2N60E Datasheet ja Spec
Valmistaja : Philips
Pakkauspäivämäärä : SOT
Pins : 3
Lämpötila : Min -55 °C | Max 150 °C
Koko : 83 KB
Hakemus : 600 V, power MOS transistor avalanche energy rated
PHB2N60E PDF Lataa