Path:OKDatasheet > Semiconductor Datasheet > Philips Datasheet > BUK555-100B
BUK555-100B spec: PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
BUK555-100B Samanlaisia
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100A
- 100 V, power MOS transistor
- BUK542-100B
- 100 V, power MOS transistor
- BUK542-60A
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK542-60B
- 60 V, power MOS transistor
- BUK543-100A
- PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 8.3 A.
- BUK543-100A
- 100 V, power MOS transistor
BUK555-100B Datasheet ja Spec
Valmistaja : Philips
Pakkauspäivämäärä :
Pins : 3
Lämpötila : Min -55 °C | Max 175 °C
Koko : 59 KB
Hakemus : PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm
BUK555-100B PDF Lataa