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MJD122-1 spec: NPN transistor for high DC current gain, 100V, 8A
MJD122-1 Samanlaisia
- MJD112-1
- Complementary Darlington Power Transistors
- MJD112RL
- Complementary Darlington Power Transistors
- MJD112T4
- Complementary Darlington Power Transistors
- MJD117
- Complementary Darlington Power Transistors
- MJD122
- Complementary Darlington Power Transistors
- MJD122
- NPN transistor for high DC current gain, 100V, 8A
- MJD122-1
- NPN transistor for high DC current gain, 100V, 8A
- MJD122-1
- NPN transistor for high DC current gain, 100V, 8A
MJD122-1 Datasheet ja Spec
Valmistaja : ON Semiconductor
Pakkauspäivämäärä : TO-251
Pins : 3
Lämpötila : Min -65 °C | Max 150 °C
Koko : 150 KB
Hakemus : NPN transistor for high DC current gain, 100V, 8A
MJD122-1 PDF Lataa