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MGW12N120 spec: Insulated Gate Bipolar Transistor N-Channel
MGW12N120 Samanlaisia
- MGW12N120
- Insulated Gate Bipolar Transistor N-Channel
- MGW12N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
- MGW14N60ED
- Insulated Gate Bipolar Transistor
MGW12N120 Datasheet ja Spec
Valmistaja : ON Semiconductor
Pakkauspäivämäärä : TO-247
Pins : 3
Lämpötila : Min 0 °C | Max 0 °C
Koko : 149 KB
Hakemus : Insulated Gate Bipolar Transistor N-Channel
MGW12N120 PDF Lataa