Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE6403
NTE6403 spec: Integrated circuit. Silicon bilateral switch (SBS).
NTE6403 Samanlaisia
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE6403 Datasheet ja Spec
Valmistaja : NTE Electronic
Pakkauspäivämäärä :
Pins : 3
Lämpötila : Min -55 °C | Max 125 °C
Koko : 24 KB
Hakemus : Integrated circuit. Silicon bilateral switch (SBS).
NTE6403 PDF Lataa