Path:okDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE Electronic-83

588 NTE170 NTE264 NTE6068 NTE366 NTE1199 NTE290 NTE1441 NTE266 NTE2086 NTE1784 NTE326 NTE3047 NTE8182 NTE998 NTE5943 NTE3302 NTE5011T1 NTE6112 NTE5884 NTE5440 NTE273 NTE6403 NTE350 NTE56 NTE6020 NTE919D NTE1690

NTE Electronic Datalehti Catalog-83

Osa EiValmistajaHakemus
NTE5517 NTE ElectronicSilicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It(rms) = 35A.
NTE5177A NTE ElectronicZener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 5.1V. Zener test current Izt = 490mA.
NTE588 NTE ElectronicSilicon diode, ultra fast switch. Max reccurent peak reverse voltage 150V. Max average forward rectified current 3.0A.
NTE170 NTE ElectronicSingle phase bridge rectifier, 2.0 Amp. Max recurrent peak reverse voltage 1000 V. Max average forward output current 2 A.
NTE264 NTE ElectronicSilicon complementary PNP transistor. Darlington power amplifier.
NTE6068 NTE ElectronicIndustrial silicon recfifier. Cathode to case. Max peak reverse voltage 800V. Max forward current 70A.
NTE366 NTE ElectronicSilicon NPN transistor. RF power output, Po = 25W @ 512MHz.
NTE1199 NTE ElectronicIntegrated circuit. CMOS frequency divider.
NTE290 NTE ElectronicSilicon complementary PNP transistor. Audio power amplifier, switch.
NTE1441 NTE ElectronicIntegrated circuit. FM IF amplifier, detector.
NTE266 NTE ElectronicSilicon NPN transistor. Darlington power amplifier.
NTE2086 NTE ElectronicIntegrated circuit. 4-stage darlington array.
NTE1784 NTE ElectronicIntegrated circuit. TV horizontal processor.
NTE326 NTE ElectronicSilicon P-channel JFET transistor. General purpose AF amplifier.
NTE3047 NTE ElectronicOptoisolator. TRIAC driver output
NTE8182 NTE ElectronicThermal cut-off (thermal fuse).
NTE998 NTE ElectronicIntegrated circuit. 1.22V reference diode.
NTE5943 NTE ElectronicSilicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 15A.
NTE3302 NTE ElectronicInsulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE5011T1 NTE ElectronicZener diode, 500watt, +-1 % tolerance. Nominal zener voltage Vz = 5.6V, Zener test current Izt = 5mA.
NTE6112 NTE ElectronicIndustrial rectifier. Repetitive voltae 1200V. Average forward current 500A.
NTE5884 NTE ElectronicSilicon power rectifier diode. Cathode to case. Peak reverse voltage 600V. Max forward current 30A.
NTE5440 NTE ElectronicSilicon controlled rectifier (SCR). Isolated tab. Repetitive peak voltage Vrrm = 800V. RMS on-state current It = 9A.
NTE273 NTE ElectronicSilicon darlington complementary PNP power aplifier.
NTE6403 NTE ElectronicIntegrated circuit. Silicon bilateral switch (SBS).
NTE350 NTE ElectronicSilicon NPN transistor. RF power amp, driver.
NTE56 NTE ElectronicSilicon NPN transistor. High gain switch and pass regulator.
NTE6020 NTE ElectronicIndustrial silicon recfifier. Cathode to case. Max peak repetitive reverse voltage 50V. Max average forward current 60A.
NTE919D NTE ElectronicIntegrated circuit. High speed dual comparator.
NTE1690 NTE ElectronicIntegrated circuit. Telephone DTMF dialer.

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