Path:OKDatasheet > Semiconductor Datasheet > NEC Datasheet > UPA1717G-E1
UPA1717G-E1 spec: P-channel enhancement type power MOS FET
UPA1717G-E1 Samanlaisia
- UPA101G
- Ultra-high-frequency NPN transistor array
- UPA101G-E1
- Ultra-high-frequency NPN transistor array
- UPA102B
- Ultra-high-frequency NPN transistor array
- UPA102B-E1
- Ultra-high-frequency NPN transistor array
- UPA102G
- Ultra-high-frequency NPN transistor array
- UPA102G-E1
- Ultra-high-frequency NPN transistor array
- UPA102P
- Ultra-high-frequency NPN transistor array
- UPA103B
- Ultra-high-frequency NPN transistor array
UPA1717G-E1 Datasheet ja Spec
Valmistaja : NEC
Pakkauspäivämäärä : 8-P-SOP
Pins : 0
Lämpötila : Min 0 °C | Max 0 °C
Koko : 71 KB
Hakemus : P-channel enhancement type power MOS FET
UPA1717G-E1 PDF Lataa