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MTD8N06E spec: TMOS E-FET power field effect transistor D2PAK for surface mount
MTD8N06E Samanlaisia
- MTD8N06E
- TMOS E-FET power field effect transistor D2PAK for surface mount
MTD8N06E Datasheet ja Spec
Valmistaja : Motorola
Pakkauspäivämäärä : DPAK
Pins : 4
Lämpötila : Min -55 °C | Max 150 °C
Koko : 203 KB
Hakemus : TMOS E-FET power field effect transistor D2PAK for surface mount
MTD8N06E PDF Lataa