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MTD2955E spec: TMOS E-FET power field effect transistor D2PAK for surface mount
MTD2955E Samanlaisia
- MTD20N03HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD20N06HD
- HDTMOS E-FET power field effect transistor D2PAK for surface mount
- MTD20N06HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD20N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD20P03HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD20P06HDL
- HDTMOS E-FET high density power FET D2PAK for surface mount
- MTD2955E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD2955V
- TMOS V power field effect transistor D2PAK for surface mount
MTD2955E Datasheet ja Spec
Valmistaja : Motorola
Pakkauspäivämäärä : DPAK
Pins : 4
Lämpötila : Min -55 °C | Max 150 °C
Koko : 267 KB
Hakemus : TMOS E-FET power field effect transistor D2PAK for surface mount
MTD2955E PDF Lataa