Path:OKDatasheet > Semiconductor Datasheet > Motorola Datasheet > MTD1P50E
MTD1P50E spec: TMOS E-FET high energy power FET D2PAK for surface mount
MTD1P50E Samanlaisia
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- HDTMOS E-FET high dansity power FET D2PAK for surface mount
- MTD15N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD15N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD1N50E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N60E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N80E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N80E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1P50E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTD1P50E Datasheet ja Spec
Valmistaja : Motorola
Pakkauspäivämäärä : DPAK
Pins : 4
Lämpötila : Min -55 °C | Max 150 °C
Koko : 101 KB
Hakemus : TMOS E-FET high energy power FET D2PAK for surface mount
MTD1P50E PDF Lataa