Path:OKDatasheet > Semiconductor Datasheet > Motorola Datasheet > MTB50N06VL
MTB50N06VL spec: TMOS V power field effect transistor D2PAK for surface mount
MTB50N06VL Samanlaisia
- MTB50N06EL
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB55N06Z
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB50N06VL Datasheet ja Spec
Valmistaja : Motorola
Pakkauspäivämäärä : DPAK
Pins : 4
Lämpötila : Min -55 °C | Max 175 °C
Koko : 273 KB
Hakemus : TMOS V power field effect transistor D2PAK for surface mount
MTB50N06VL PDF Lataa